SF156S
156x156mm monocrystalline wafer
Item | Parameters | |
Growth method | CZ | |
Crystal orientation | Including the surface crystal orientation and the edge crystal orientation | |
Dopant | Doped with B or G a | |
Conductivity type | P-type silicon | |
Oxygen and carbon content | [Oi] ≤ 1 x 1018actoms/cm3 [Cs] ≤ 5 x 1017actoms/cm3 | |
Minority carrier lifetime | Original wafer > 1 us | |
Resistivity | 1 - 3 Ω · m 3 - 6Ω · m |